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NGTB25N120FL3WG PDF预览

NGTB25N120FL3WG

更新时间: 2024-09-14 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
12页 294K
描述
IGBT,超场截止 — 1200V 25A

NGTB25N120FL3WG 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:12 weeks 4 days
风险等级:2.06Base Number Matches:1

NGTB25N120FL3WG 数据手册

 浏览型号NGTB25N120FL3WG的Datasheet PDF文件第2页浏览型号NGTB25N120FL3WG的Datasheet PDF文件第3页浏览型号NGTB25N120FL3WG的Datasheet PDF文件第4页浏览型号NGTB25N120FL3WG的Datasheet PDF文件第5页浏览型号NGTB25N120FL3WG的Datasheet PDF文件第6页浏览型号NGTB25N120FL3WG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
IGBT - Ultra Field Stop  
NGTB25N120FL3WG  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Ultra Field Stop Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low onstate voltage and minimal switching loss. The IGBT is  
well suited for UPS and solar applications. Incorporated into the device  
is a soft and fast copackaged free wheeling diode with a low forward  
voltage.  
25 A, 1200 V  
VCEsat = 1.7 V  
Eoff = 0.7 mJ  
C
G
Features  
E
Extremely Efficient Trench with Field Stop Technology  
T  
= 175°C  
Jmax  
Soft Fast Reverse Recovery Diode  
Optimized for High Speed Switching  
These are PbFree Devices  
G
Typical Applications  
Solar Inverter  
Uninterruptible Power Inverter Supplies (UPS)  
Welding  
C
E
TO247  
CASE 340AM  
MARKING DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Collectoremitter Voltage  
Collector Current  
Symbol  
Value  
Unit  
V
V
CES  
1200  
I
C
A
@ T = 25°C  
50  
25  
C
25N120FL3  
AYWWG  
@ T = 100°C  
C
Pulsed Collector Current, T  
I
100  
A
A
pulse  
CM  
Limited by T  
Jmax  
Diode Forward Current  
I
F
@ T = 25°C  
50  
25  
C
@ T = 100°C  
C
Diode Pulsed Current, T  
Limited  
I
100  
A
V
25N120FL3 = Specific Device Code  
pulse  
FM  
by T  
Jmax  
A
Y
= Assembly Location  
= Year  
Gateemitter Voltage  
Transient Gateemitter Voltage  
(T = 5 ms, D < 0.10)  
V
$20  
GE  
WW  
G
= Work Week  
= PbFree Package  
30  
pulse  
Power Dissipation  
P
D
W
@ T = 25°C  
349  
174  
C
@ T = 100°C  
C
ORDERING INFORMATION  
Operating Junction Temperature  
Range  
T
55 to +175  
°C  
J
Device  
NGTB25N120FL3WG  
Package  
Shipping  
30 Units / Rail  
TO247  
(PbFree)  
Storage Temperature Range  
T
stg  
55 to +175  
°C  
°C  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2021 Rev. 6  
NGTB25N120FL3W/D  

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