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NGTB20N120IHSWG

更新时间： 2024-01-04 10:43:24
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 184K
描述
IGBT

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NGTB20N120IHSWG 数据手册

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NGTB20N120IHSWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on−state voltage and minimal switching loss. The IGBT is  
well suited for resonant or soft switching applications. Incorporated  
into the device is a rugged co−packaged free wheeling diode with a  
low forward voltage.  
http://onsemi.com  
20 A, 1200 V  
Features  
V
E
CEsat = 2.10 V  
off = 0.65 mJ  
• Low Saturation Voltage using Trench with Field Stop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• Optimized for Low Case Temperature in IH Cooker Application  
• Low Gate Charge  
C
• These are Pb−Free Devices  
Typical Applications  
• Inductive Heating  
• Consumer Appliances  
• Soft Switching  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
1200  
Collector current  
@ TC = 25°C  
A
G
40  
20  
TO−247  
CASE 340L  
STYLE 4  
C
@ TC = 100°C  
E
Pulsed collector current, T  
ICM  
IF  
120  
A
A
pulse  
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
MARKING DIAGRAM  
40  
20  
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
120  
A
pulse  
by T  
Jmax  
Gate−emitter voltage  
VGE  
PD  
$20  
V
20N120IHS  
AYWWG  
Power Dissipation  
W
@ TC = 25°C  
@ TC = 100°C  
156  
62.5  
Operating junction temperature  
range  
T
J
−55 to +150  
°C  
Storage temperature range  
T
−55 to +150  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
NGTB20N120IHSWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
NGTB20N120IHS/D  
1234567...9

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NGTB20N120IHSWG 替代型号

型号 品牌 替代类型 描述 数据表
IRG7PH35UDPBF INFINEON

功能相似

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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