Datasheet > NGTB20N120IHWG

NGTB20N120IHWG

更新时间： 2024-09-14 11:13:31

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	176K
描述
IGBT，20 A，1200V，TO247

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中文翻译

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NGTB20N120IHWG 数据手册

NGTB20N120IHWG

IGBT - Induction Cooking

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, provides and

superior performance in demanding switching applications, and offers

low on−state voltage with minimal switching loss. The IGBT is well

suited for resonant or soft switching applications.

www.onsemi.com

Features

20 A, 1200 V

• Extremely Efficient Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for Low Losses in IH Cooker Application

• This is a Pb−Free Device

V_CEsat= 2.20 V

E_off= 0.48 mJ

Typical Applications

• Inductive Heating

• Consumer Appliances

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage @ T = 25°C

CES

1200

Collector current

@ TC = 25°C

@ TC = 100°C

Pulsed collector current, T

limited

pulse

by T

, 10 ms Pulse, V = 15 V

Jmax

TO−247

CASE 340AL

Diode forward current

@ TC = 25°C

@ TC = 100°C

MARKING DIAGRAM

Diode pulsed current, T

limited

pulse

by T

, 10 ms Pulse, V = 0 V

Jmax

Gate−emitter voltage

Transient Gate−emitter voltage

$20

$25

pulse

= 5 ms, D < 0.10)

20N120IH

AYWWG

Power Dissipation

@ TC = 25°C

@ TC = 100°C

341

170

Operating junction temperature range

Storage temperature range

−40 to +175

−55 to +175

260

°C

stg

Lead temperature for soldering, 1/8″

from case for 5 seconds

SLD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

Device

NGTB20N120IHWG

Package

Shipping

TO−247

30 Units / Rail

(Pb−Free)

Publication Order Number:

September, 2015 − Rev. 1

NGTB20N120IHW/D

12 3 4 5 6 7 8

中文翻译

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