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NGTB20N120LWG PDF预览

NGTB20N120LWG

更新时间： 2024-09-13 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
9页 178K
描述
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.

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NGTB20N120LWG 数据手册

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NGTB20N120LWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on−state voltage and minimal switching loss. The IGBT is  
well suited for resonant or soft switching applications. Incorporated  
into the device is a rugged co−packaged free wheeling diode with a  
low forward voltage.  
http://onsemi.com  
20 A, 1200 V  
Features  
V
E
CEsat = 1.80 V  
off = 0.7 mJ  
• Low Saturation Voltage using Trench with Fieldstop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• Low Gate Charge  
C
• 5 ms Short Circuit Capability  
• These are Pb−Free Devices  
Typical Applications  
• Inverter Welding Machines  
• Microwave Ovens  
• Industrial Switching  
• Motor Control Inverter  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Collector−emitter voltage  
V
CES  
1200  
G
TO−247  
CASE 340L  
STYLE 4  
Collector current  
@ TC = 25°C  
I
C
A
C
E
40  
20  
@ TC = 100°C  
Pulsed collector current, T  
I
200  
A
A
pulse  
CM  
limited by T  
Jmax  
MARKING DIAGRAM  
Diode forward current  
@ TC = 25°C  
I
F
40  
20  
@ TC = 100°C  
Diode pulsed current, T  
limited  
I
200  
A
pulse  
FM  
by T  
Jmax  
20N120L  
AYWWG  
Gate−emitter voltage  
V
$20  
V
GE  
Power Dissipation  
P
W
D
@ TC = 25°C  
@ TC = 100°C  
192  
77  
Short Circuit Withstand Time  
= 15 V, V = 600 V, T ≤ 150°C  
T
5
ms  
°C  
SC  
V
GE  
CE  
J
Operating junction temperature  
range  
T
−55 to +150  
J
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Storage temperature range  
T
−55 to +150  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
NGTB20N120LWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 2  
NGTB20N120L/D  
1234567...9

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