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NGTB15N60S1EG

更新时间： 2024-09-15 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 179K
描述
IGBT - Short-Circuit Rated

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中文翻译

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NGTB15N60S1EG 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：12 weeks风险等级：2.05
外壳连接：COLLECTOR最大集电极电流 (IC)：30 A
集电极-发射极最大电压：650 V配置：SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值：6.5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：117 W
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：440 ns
标称接通时间 (ton)：93 nsBase Number Matches：1

NGTB15N60S1EG 数据手册

 浏览型号NGTB15N60S1EG的Datasheet PDF文件第2页浏览型号NGTB15N60S1EG的Datasheet PDF文件第3页浏览型号NGTB15N60S1EG的Datasheet PDF文件第4页浏览型号NGTB15N60S1EG的Datasheet PDF文件第5页浏览型号NGTB15N60S1EG的Datasheet PDF文件第6页浏览型号NGTB15N60S1EG的Datasheet PDF文件第7页 
NGTB15N60S1EG  
IGBT - Short-Circuit Rated  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Non−Punch Through (NPT) Trench construction, and  
provides superior performance in demanding switching applications.  
Offering both low on state voltage and minimal switching loss, the  
IGBT is well suited for motor drive control and other hard switching  
applications. Incorporated into the device is a rugged co−packaged  
reverse recovery diode with a low forward voltage.  
http://onsemi.com  
15 A, 600 V  
Features  
VCEsat = 1.5 V  
• Low Saturation Voltage Resulting in Low Conduction Loss  
• Low Switching Loss in Higher Frequency Applications  
• Soft Fast Reverse Recovery Diode  
• 5 ms Short Circuit Capability  
• Excellent Current versus Package Size Performance Density  
• This is a Pb−Free Device  
C
G
Typical Applications  
E
• White Goods Appliance Motor Control  
• General Purpose Inverter  
• AC and DC Motor Control  
C
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Collector−emitter voltage  
V
CES  
600  
TO−220  
CASE 221A  
STYLE 4  
Collector current  
@ TC = 25°C  
IC  
A
30  
15  
G
@ TC = 100°C  
C
E
Pulsed collector current, T  
limited by  
I
120  
A
A
pulse  
CM  
T
Jmax  
MARKING DIAGRAM  
Diode forward current  
@ TC = 25°C  
@ TC = 100°C  
I
F
30  
15  
Diode pulsed current, T  
Jmax  
limited by  
I
120  
A
pulse  
FM  
T
Gate−emitter voltage  
V
$20  
V
GE  
15N60S1G  
AYWW  
Power dissipation  
@ TC = 25°C  
@ TC = 100°C  
P
W
D
117  
47  
Short circuit withstand time  
t
5
ms  
°C  
°C  
°C  
SC  
V
= 15 V, V = 400 V, T v +150°C  
GE  
CE  
J
Operating junction temperature range  
T
−55 to  
+150  
J
A
Y
= Assembly Location  
= Year  
Storage temperature range  
T
−55 to  
+150  
stg  
WW  
G
= Work Week  
= Pb−Free Package  
Lead temperature for soldering, 1/8” from  
case for 5 seconds  
T
SLD  
260  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
NGTB15N60S1EG  
Package  
Shipping  
50 Units / Rail  
TO−220  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 2  
NGTB15N60S1E/D  
1234567...10

中文翻译

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NGTB15N60S1EG 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PC30FDPBF INFINEON

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