5秒后页面跳转
捷配首页

Datasheet > NGTB20N120IHRWG
NGTB20N120IHRWG PDF预览

NGTB20N120IHRWG

更新时间： 2024-11-05 12:32:59
品牌 Logo 应用领域
安森美 - ONSEMI 二极管双极性晶体管
页数 文件大小 规格书
10页 182K
描述
IGBT with Monolithic Free Wheeling Diode

阅读下载

中文翻译

获取价格

NGTB20N120IHRWG 数据手册

 浏览型号NGTB20N120IHRWG的Datasheet PDF文件第2页浏览型号NGTB20N120IHRWG的Datasheet PDF文件第3页浏览型号NGTB20N120IHRWG的Datasheet PDF文件第4页浏览型号NGTB20N120IHRWG的Datasheet PDF文件第5页浏览型号NGTB20N120IHRWG的Datasheet PDF文件第6页浏览型号NGTB20N120IHRWG的Datasheet PDF文件第7页 
NGTB20N120IHRWG  
IGBT with Monolithic Free  
Wheeling Diode  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, provides and  
superior performance in demanding switching applications, and offers  
low on−state voltage with minimal switching loss. The IGBT is well  
suited for resonant or soft switching applications.  
http://onsemi.com  
20 A, 1200 V  
Features  
V
CEsat = 2.10 V  
• Extremely Efficient Trench with Fieldstop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• Optimized for Low Losses in IH Cooker Application  
• Reliable and Cost Effective Single Die Solution  
• These are Pb−Free Devices  
Eoff = 0.45 mJ  
C
Typical Applications  
• Inductive Heating  
• Consumer Appliances  
• Soft Switching  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage @ T = 25°C  
1200  
J
Collector current  
@ TC = 25°C  
A
40  
20  
G
@ TC = 100°C  
TO−247  
CASE 340AL  
C
Pulsed collector current, T  
ICM  
120  
A
A
E
pulse  
limited by T  
15 V  
, 10 ms Pulse, V  
=
Jmax  
GE  
Diode forward current  
@ TC = 25°C  
IF  
40  
20  
MARKING DIAGRAM  
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
120  
A
V
pulse  
GE  
by T  
, 10 ms Pulse, V = 0 V  
Jmax  
Gate−emitter voltage  
VGE  
$20  
$25  
Transient Gate−emitter voltage  
(T  
pulse  
= 5 ms, D < 0.10)  
20N120IHR  
AYWWG  
Power Dissipation  
PD  
W
@ TC = 25°C  
384  
192  
@ TC = 100°C  
Operating junction temperature  
range  
T
J
−40 to +175  
°C  
Storage temperature range  
T
−55 to +175  
°C  
°C  
stg  
A
Y
= Assembly Location  
= Year  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
30 Units / Rail  
NGTB20N120IHRWG TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 0  
NGTB20N120IHR/D  
1234567...10

中文翻译

下载PDF

与NGTB20N120IHRWG相关器件

型号 品牌 获取价格 描述 数据表
NGTB20N120IHSWG ONSEMI

获取价格

 		IGBT
NGTB20N120IHWG ONSEMI

获取价格

 		IGBT，20 A，1200V，TO247
NGTB20N120LWG ONSEMI

获取价格

 		Incorporated into the device is a rugged coâˆ
NGTB20N135IHRWG ONSEMI

获取价格

 		IGBT with Monolithic Free Wheeling Diode
NGTB20N60L2TF1G ONSEMI

获取价格

 		IGBT，N 沟道 600V，20A，VCE（sat）； 1.45V TO-3PF-3L，
NGTB25N120FBT4G ONSEMI

获取价格

 		Reading ON Semiconductor IGBT Datasheets
NGTB25N120FDT4G ONSEMI

获取价格

 		Reading ON Semiconductor IGBT Datasheets
NGTB25N120FET4G ONSEMI

获取价格

 		Reading ON Semiconductor IGBT Datasheets
NGTB25N120FFT4G ONSEMI

获取价格

 		Reading ON Semiconductor IGBT Datasheets
NGTB25N120FL2WAG ONSEMI

获取价格

 		IGBT，1200V，场截止 II，25 A

与NGTB20N120IHRWG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证