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NGTB15N135IHRWG PDF预览

NGTB15N135IHRWG

更新时间： 2024-11-06 11:12:07
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 259K
描述
IGBT 1350V 15A FS2-RC 电感加热

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中文翻译

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NGTB15N135IHRWG 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：compliant
Factory Lead Time：4 weeks风险等级：5.68
Base Number Matches：1

NGTB15N135IHRWG 数据手册

 浏览型号NGTB15N135IHRWG的Datasheet PDF文件第2页浏览型号NGTB15N135IHRWG的Datasheet PDF文件第3页浏览型号NGTB15N135IHRWG的Datasheet PDF文件第4页浏览型号NGTB15N135IHRWG的Datasheet PDF文件第5页浏览型号NGTB15N135IHRWG的Datasheet PDF文件第6页浏览型号NGTB15N135IHRWG的Datasheet PDF文件第7页 
NGTB15N135IHRWG  
IGBT with Monolithic Free  
Wheeling Diode  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on−state voltage and minimal switching loss. The IGBT is  
well suited for resonant or soft switching applications.  
http://onsemi.com  
15 A, 1350 V  
Features  
V
CEsat = 2.15 V  
• Extremely Efficient Trench with Fieldstop Technology  
• 1350 V Breakdown Voltage  
Eoff = 0.42 mJ  
• Optimized for Low Case Temperature in IH Cooker Application  
• Reliable and Cost Effective Single Die Solution  
• These are Pb−Free Devices  
C
Typical Applications  
• Inductive Heating  
• Consumer Appliances  
• Soft Switching  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
1350  
Collector current  
@ TC = 25°C  
A
30  
15  
G
@ TC = 100°C  
TO−247  
CASE 340AL  
C
E
Pulsed collector current, T  
ICM  
IF  
60  
A
A
pulse  
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
30  
15  
MARKING DIAGRAM  
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
60  
A
V
pulse  
by T  
Jmax  
Gate−emitter voltage  
Transient Gate−emitter Voltage  
(T = 5 ms, D < 0.10)  
VGE  
$20  
25  
pulse  
15N135IHR  
AYWWG  
Power Dissipation  
PD  
W
@ TC = 25°C  
357  
178  
@ TC = 100°C  
Operating junction temperature  
range  
T
J
−40 to +175  
°C  
Storage temperature range  
T
−55 to +175  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
NGTB15N135IHRWG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 0  
NGTB15N135IHR/D  
1234567...11

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