型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE5520379A-T1A-A | CEL |
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NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET | |
NE5521 | NXP |
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LVDT signal conditioner | |
NE55210K+/-.25% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 210000ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel, | |
NE55210K+/-.5% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 210000ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel, | |
NE55210R+/-.5% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 210ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel, | |
NE55215K+/-.1% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 215000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel, | |
NE55215K+/-1% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 215000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel, | |
NE55215R+/-.1% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 215ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel, | |
NE55215R+/-.25% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 215ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel, | |
NE5521D | NXP |
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LVDT signal conditioner |