Datasheet > NE552R479A-T1

NE552R479A-T1

更新时间： 2024-09-23 19:17:31

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器晶体管
页数	文件大小	规格书
11页	286K
描述
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN

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NE552R479A-T1 技术参数

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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型号	品牌	获取价格	描述	数据表
NE552R479A-T1A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
NE552R479A-T1A-A	CEL	获取价格	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
NE552R479A-T1A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
NE552R679A	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
NE552R679A-T1	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-T1A	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-T1A-A	NEC	获取价格	暂无描述
NE55301R+/-.1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,
NE55301R+/-.5%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,