Datasheet > NE552R479A-T1A-A

NE552R479A-T1A-A

更新时间： 2024-11-28 21:53:51

品牌	Logo	应用领域
CEL		晶体晶体管放大器
页数	文件大小	规格书
9页	497K
描述
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

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NE552R479A-T1A-A 数据手册

NEC's 3.0 V, 0.25 W L&S-BAND

MEDIUM POWER SILICON LD-MOSFET

NE552R479A

OUTLINE DIMENSIONS (Units in mm)

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V

• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

• SINGLE SUPPLY: 2.8 to 6 V

PACKAGE OUTLINE 79A

(Bottom View)

4.2 MAX.

Source

1.5±0.2

Source

• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

Gate

Drain

Gate

Drain

0.4±0.15

5.7 MAX.

0.8 MAX.

3.6±0.2

DESCRIPTION

APPLICATIONS

NEC's NE552R479A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the transmission

power ampliﬁer for mobile and ﬁxed wireless applications.

Die are manufactured using NEC's NEWMOS2 technology

(NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a

surface mount package.

• DIGITAL CELLULAR PHONES:

3.0 V GSM1900 Pre Driver

• ANALOG CELLULAR PHONES:

2.4 V AMPS Handsets

• OTHERS:

W-LAN

Short Range Wireless

Retail Business Radio

Special Mobile Radio

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE552R479A

79A

PACKAGE OUTLINE

SYMBOLS

POUT

CHARACTERISTICS

Output Power

UNITS

dBm

MIN

TYP

26.0

11.0

MAX

TEST CONDITIONS

24.0

f = 2.45 GHz, VDS = 3.0 V,

IDSQ = 200 mA (RF OFF)

Pin = 19 dBm, except

Linear Gain

ηADD

Power Added Efﬁciency

Drain Current

Pin = 10 dBm for linear gain

230

IGSS

Gate-to-Source Leakage Current

100

VGS = 5.0 V

VDS = 6.0 V

IDSS

Saturated Drain Current

(Zero Gate Voltage Drain Voltage)

VTH

Gate Threshold Voltage

Transconductance

1.4

0.4

1.9

VDS = 3.5 V, IDS = 1 mA

VDS = 3.5 V, IDS = 100 mA

IDSS = 10 μA

BVDSS

RTH

Drain-to-Source Breakdown Voltage

Thermal Resistance

°C/W

Channel-to-Case

Notes:

1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

California Eastern Laboratories

12 3 4 5 6 7...9

中文翻译

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与NE552R479A-T1A-A相关器件

型号	品牌	获取价格	描述	数据表
NE552R679A	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
NE552R679A-T1	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-T1A	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-T1A-A	NEC	获取价格	暂无描述
NE55301R+/-.1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,
NE55301R+/-.5%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,
NE55309R+/-.25%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 309ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
NE5530F	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14
NE5530F-A	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14

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