是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | MICROWAVE, R-XQMW-F4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.07 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 6 V | 最大漏极电流 (ID): | 0.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-XQMW-F4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROWAVE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE552R679A-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NE552R679A-T1 | NEC |
获取价格 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | |
NE552R679A-T1A | NEC |
获取价格 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | |
NE552R679A-T1A-A | NEC |
获取价格 |
暂无描述 | |
NE55301R+/-.1% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel, | |
NE55301R+/-.5% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel, | |
NE55309R+/-.25% | VISHAY |
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Fixed Resistor, Metal Film, 0.25W, 309ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel, | |
NE5530F | PHILIPS |
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Operational Amplifier, 2 Func, BIPolar, CDIP14 | |
NE5530F-A | PHILIPS |
获取价格 |
Operational Amplifier, 2 Func, BIPolar, CDIP14 | |
NE5530F-B | PHILIPS |
获取价格 |
Operational Amplifier, 2 Func, BIPolar, CDIP14 |