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NE552R679A-A

更新时间： 2024-09-23 13:11:59
品牌 Logo 应用领域
日电电子 - NEC 放大器射频
页数 文件大小 规格书
9页 65K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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NE552R679A-A 技术参数

是否Rohs认证：符合生命周期：Transferred
包装说明：79A, 4 PINReach Compliance Code：compliant
风险等级：5.64Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：6 V最大漏极电流 (ID)：0.5 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-XQMW-F4湿度敏感等级：1
元件数量：1端子数量：4
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：MICROWAVE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：QUAD
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

NE552R679A-A 数据手册

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DATA SHEET  
SILICON POWER MOS FET  
NE552R679A  
3.0 V OPERATION SILICON RF POWER LD-MOS FET  
FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS  
DESCRIPTION  
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the  
transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2  
technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can  
deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.  
FEATURES  
•
•
•
•
•
High output power  
: Pout = 28.0 dBm TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)  
High power added efficiency : ηadd = 60% TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)  
High linear gain  
: GL = 20 dB TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 5 dBm)  
: 5.7 × 5.7 × 1.1 mm MAX.  
Surface mount package  
Single supply  
: VDS = 2.8 to 6.0 V  
APPLICATIONS  
• Family Radio Service  
: 3.0 V Handsets  
ORDERING INFORMATION  
Part Number  
Package  
79A  
Marking  
AU  
Supplying Form  
• 12 mm wide embossed taping  
NE552R679A-T1  
• Gate pin face the perforation side of the tape  
• Qty 1 kpcs/reel  
NE552R679A-T1A  
• 12 mm wide embossed taping  
• Gate pin face the perforation side of the tape  
• Qty 5 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE552R679A  
Caution Please handle this device at static-free workstation, because this is an electrostatic  
sensitive device.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10125EJ01V1DS (1st edition)  
Date Published April 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2001, 2002  
1234567...9

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