NE552R679A-T1

更新时间： 2024-11-29 10:27:23

品牌	Logo	应用领域
日电电子 - NEC		放大器射频
页数	文件大小	规格书
9页	65K
描述
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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NE552R679A-T1 数据手册

DATA SHEET

SILICON POWER MOS FET

NE552R679A

3.0 V OPERATION SILICON RF POWER LD-MOS FET

FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2

technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can

deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.

FEATURES

•

High output power

: P^out= 28.0 dBm TYP. (V^DS= 3.0 V, I^Dset= 300 mA, f = 460 MHz, Pⁱⁿ= 15 dBm)

High power added efficiency : η^add= 60% TYP. (V^DS= 3.0 V, I^Dset= 300 mA, f = 460 MHz, Pⁱⁿ= 15 dBm)

High linear gain

: G^L= 20 dB TYP. (V^DS= 3.0 V, I^Dset= 300 mA, f = 460 MHz, Pⁱⁿ= 5 dBm)

: 5.7 × 5.7 × 1.1 mm MAX.

Surface mount package

Single supply

: V^DS= 2.8 to 6.0 V

APPLICATIONS

• Family Radio Service

: 3.0 V Handsets

ORDERING INFORMATION

Part Number

Package

79A

Marking

Supplying Form

• 12 mm wide embossed taping

NE552R679A-T1

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

NE552R679A-T1A

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE552R679A

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10125EJ01V1DS (1st edition)

Date Published April 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2002

12 3 4 5 6 7...9

中文翻译

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与NE552R679A-T1相关器件

型号	品牌	获取价格	描述	数据表
NE552R679A-T1A	NEC	获取价格	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
NE552R679A-T1A-A	NEC	获取价格	暂无描述
NE55301R+/-.1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,
NE55301R+/-.5%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 301ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,
NE55309R+/-.25%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 309ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
NE5530F	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14
NE5530F-A	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14
NE5530F-B	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14
NE5530FSIIA	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, CDIP14
NE5530H	PHILIPS	获取价格	Operational Amplifier, 2 Func, BIPolar, MBCY10

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