Datasheet > NE5531079A-T1

NE5531079A-T1

更新时间： 2024-11-12 01:09:27

品牌	Logo	应用领域
CEL		放大器
页数	文件大小	规格书
8页	382K
描述
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

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NE5531079A-T1 数据手册

SILICON POWER MOS FET

NE5531079A

7.5 V OPERATION SILICON RF POWER LDMOS FET

FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology

and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added

efficiency at 460 MHz with 7.5 V supply voltage.

FEATURES

• High output power

: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

• High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

• High linear gain

: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)

: 5.7  5.7  1.1 mm MAX.

• Surface mount package

• Single supply

: VDS = 7.5 V MAX.

APPLICATIONS

• 460 MHz band radio systems

• 900 MHz band radio systems

ORDERING INFORMATION

Part Number

NE5531079A

Order Number

NE5531079A-A

Package

Marking

Supplying Form

79A (Pb-Free)

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

NE5531079A-T1

NE5531079A-T1-A

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

NE5531079A-T1A NE5531079A-T1A-A

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5531079A-A

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10752EJ01V0DS (1st edition)

Date Published April 2009 NS

12 3 4 5 6 7 8

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