型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE5531079A-A | NEC |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NE5531079A-A | RENESAS |
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NE5531079A-A | |
NE5531079A-A | CEL |
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7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1 | CEL |
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7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1 | RENESAS |
获取价格 |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1A | CEL |
获取价格 |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1A | RENESAS |
获取价格 |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1-A | CEL |
获取价格 |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
NE5531079A-T1A-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NE5531079A-T1A-A | RENESAS |
获取价格 |
NE5531079A-T1A-A |