生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 18 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.82 |
Is Samacsys: | N | 其他特性: | IT CAN ALSO OPERATE FROM A +/-2.5V TO +/-10V SUPPLY |
转换器类型: | SIGNAL CONDITIONER | JESD-30 代码: | R-PDIP-T18 |
长度: | 23.37 mm | 功能数量: | 1 |
端子数量: | 18 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 认证状态: | Not Qualified |
座面最大高度: | 4.06 mm | 信号/输出频率: | 20000 Hz |
最大供电电压: | 20 V | 最小供电电压: | 5 V |
标称供电电压: | 10 V | 表面贴装: | NO |
温度等级: | COMMERCIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE552R479A | CEL |
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NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET | |
NE552R479A-T1 | RENESAS |
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S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN | |
NE552R479A-T1 | NEC |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
NE552R479A-T1A | NEC |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
NE552R479A-T1A-A | CEL |
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NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET | |
NE552R479A-T1A-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
NE552R679A | NEC |
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3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | |
NE552R679A-A | NEC |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NE552R679A-T1 | NEC |
获取价格 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | |
NE552R679A-T1A | NEC |
获取价格 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |