Datasheet > NE34018-TI-63-A

NE34018-TI-63-A

更新时间： 2024-11-13 03:46:43

品牌	Logo	应用领域
CEL		晶体放大器晶体管光电二极管 ISM频段
页数	文件大小	规格书
10页	200K
描述
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

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NE34018-TI-63-A 数据手册

GaAs HJ-FET L TO S BAND

LOW NOISE AMPLIFIER

(New Plastic Package)

NE34018

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 20 mA

•

LOW COST MINIATURE PLASTIC PACKAGE

(SOT-343)

LOW NOISE FIGURE:

0.6 dB typical at 2 GHz

HIGH ASSOCIATED GAIN:

16.0 dB typical at 2 GHz

•

LG = 0.6 µm, WG = 400 µm

TAPE & REEL PACKAGING

DESCRIPTION

NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-

tion FET housed in a miniature (SOT-343) plastic surface

mount package. The device is fabricated using ion implanta-

tion for improved RF and DC performance, reliability, and

uniformity. Its low noise figure, high gain, small size and

weight make it an ideal low noise amplifier transistor in the 1-

3 GHz frequency range. The NE34018 is suitable for GPS,

PCS, WLAN, MMDS, and other commercial applications.

0.5

5 6 7 8 910

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

18 Package

SOT-343 Style

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE34018

PACKAGE OUTLINE

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz

Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz

0.6

1.0

14.0

16.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 2 GHz

VDS = 2 V, IDS = 10 mA

dBm

16.5

VDS = 3 V, IDS = 30 mA

G1dB

Gain at P1dB, f = 2 GHz

VDS = 2 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

17.0

17.5

O/P IP3

Output IP3 at f = 2 GHz, ∆f = 1 MHz

VDS = 2 V, IDS = 10 mA

dBm

VDS = 2 V, IDS = 30 mA

IDSS

Saturated Drain Current at VDS = 2 V, VGS = 0 V

Pinch Off Voltage at VDS = 2 V, ID = 100 µA

Transconductance at VDS = 2 V, ID = 5 mA

Gate to Source Leakage Current at VGS = -3 V

Thermal Resistance (Channel to Ambient)

-2.0

120

-0.2

-0.8

µA

IGSO

0.5

RTH(CH-A)

˚C/W

833

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

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与NE34018-TI-63-A相关器件

型号	品牌	获取价格	描述	数据表
NE34018-TI-64	CEL	获取价格	RF Small Signal Field-Effect Transistor, PLASTIC, SOT-343, 4 PIN
NE34018-TI-64-A	CEL	获取价格	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
NE345L-10B	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
NE350184C	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE350184C-T1	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE350184C-T1A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE350184C-T1-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F
NE350184C-T1-A	RENESAS	获取价格	NE350184C-T1-A
NE350184C-T1A-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F
NE3503M04	CEL	获取价格	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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