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NE3508M04 PDF预览

NE3508M04

更新时间: 2024-02-23 05:59:59
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
11页 1291K
描述
HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3508M04 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.34其他特性:LOW NOISE
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:3 V最大漏极电流 (ID):0.03 A
FET 技术:HETERO-JUNCTION最高频带:S BAND
JESD-30 代码:R-PDSO-F4JESD-609代码:e6
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最小功率增益 (Gp):12 dB认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NE3508M04 数据手册

 浏览型号NE3508M04的Datasheet PDF文件第2页浏览型号NE3508M04的Datasheet PDF文件第3页浏览型号NE3508M04的Datasheet PDF文件第4页浏览型号NE3508M04的Datasheet PDF文件第5页浏览型号NE3508M04的Datasheet PDF文件第6页浏览型号NE3508M04的Datasheet PDF文件第7页 
PRELIMINARY PRODUCT INFORMATION  
HETERO JUNCTION FIELD EFFECT TRANSISITOR  
NE3508M04  
L to S BAND LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
FEATURES  
- Super Low Noise Figure & Associated Gain :  
NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA  
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )  
APPLICATIONS  
- Satellite Radio(SDARS, DMB, etc.) antenna LNA  
- LNA for Micro-wave communication system  
ORDERING INFORMATION  
Part Number  
Order Number  
Quantity  
Marking  
V79  
Supplying Form  
- 8 mm wide emboss taping  
50pcs (Non reel)  
NE3508M04  
NE3508M04-A  
- Pin1(Source), Pin2(Drain)  
face the perforation side of the tape  
NE3508M04-T2  
NE3508M04-T2-A  
3 Kpcs/reel  
Remark To order evaluation samples, please contact your local NEC sales office.  
Part number for sample order: NE3508M04  
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
SYMBOL  
VDS  
VGS  
ID  
RATINGS  
4.0  
UNIT  
V
-3.0  
V
IDSS  
mA  
µA  
mW  
°C  
Gate Current  
IG  
400  
Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
Tch  
Tstg  
175  
+150  
- 65 to +150  
°C  
Note Mounted on 1.08cm2 X 1.0mm(t) glass epoxy PCB  
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Document No. P*****EJ0V0PM00 (10th edition)  
© NEC Compound Semiconductor Devices 2005  
Date Published October 2005 CP(K)  

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