Datasheet > NE3509M04-T2

NE3509M04-T2

更新时间： 2024-11-13 03:46:43

品牌	Logo	应用领域
CEL		放大器
页数	文件大小	规格书
11页	1257K
描述
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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中文翻译

获取价格

数据手册

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NE3509M04-T2 数据手册

PRELIMINARY PRODUCT INFORMATION

HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3509M04

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

- Super Low Noise Figure & Associated Gain :

NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA

- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )

APPLICATIONS

- Satellite Radio(SDARS, DMB, etc.) antenna LNA

- GPS antenna LNA

- LNA for Micro-wave communication system

ORDERING INFORMATION

Part Number

Order Number

Quantity

Marking

V80

Supplying Form

- 8 mm wide emboss taping

50pcs (Non reel)

NE3509M04

NE3509M04-A

- Pin1(Source), Pin2(Drain)

face the perforation side of the tape

NE3509M04-T2

NE3509M04-T2-A

3 Kpcs/reel

Remark To order evaluation samples, please contact your local NEC sales office.

Part number for sample order: NE3509M04

ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current

SYMBOL

VDS

VGS

RATINGS

4.0

UNIT

-3.0

IDSS

µA

°C

Gate Current

200

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

Tch

Tstg

150

+150

- 65 to +150

°C

Note Mounted on 1.08cm²X 1.0mm(t) glass epoxy PCB

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Document No. P*****EJ0V0PM00 (10th edition)

Date Published October 2005 CP(K)

12 3 4 5 6 7...11

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与NE3509M04-T2相关器件

型号	品牌	获取价格	描述	数据表
NE3509M04-T2-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun
NE3509M04-T2-A	CEL	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3509M04-T2-A	RENESAS	获取价格	NE3509M04-T2-A
NE3509M04-T2B-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun
NE3509M04-T2B-A	RENESAS	获取价格	NE3509M04-T2B-A
NE3509M14	RENESAS	获取价格	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
NE3510M04	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04	NEC	获取价格	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3510M04-A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04-A	RENESAS	获取价格	NE3510M04-A