Datasheet > NE3511S02-T1D-A

NE3511S02-T1D-A

更新时间： 2024-11-13 03:46:43

品牌	Logo	应用领域
CEL		晶体放大器晶体管 ISM频段
页数	文件大小	规格书
10页	284K
描述
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3511S02-T1D-A 数据手册

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3511S02

X TO Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure and high associated gain

NF = 0.30 dB TYP., G^a= 13.5 dB TYP. @ f = 12 GHz

Micro-X plastic (S02) package

•

APPLICATIONS

•

X to Ku-band DBS LNB

Other X to Ku-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel

NE3511S02-T1D NE3511S02-T1D-A 10 kpcs/reel

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3511S02-A

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

−3

IDSS

µA

°C

Gate Current

100

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

165

Tch

+125

−65 to +125

Tstg

°C

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10642EJ01V0DS (1st edition)

Date Published October 2006 NS CP(N)

2006

12 3 4 5 6 7...10

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