Datasheet > NE3515S02-T1C-A

NE3515S02-T1C-A

更新时间： 2024-11-13 12:27:43

品牌	Logo	应用领域
CEL		晶体放大器晶体管
页数	文件大小	规格书
9页	415K
描述
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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数据手册

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NE3515S02-T1C-A 数据手册

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3515S02

X to Ku-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure, high associated gain and middle output power

NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, I = 10 mA

= 25 mA set (Non-RF)

PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, I

• Micro-X plastic (S02) package

APPLICATIONS

• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer

• DBS LNB, VSAT

• Other X to Ku-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel

NE3515S02-T1D NE3515S02-T1D-A 10 kpcs/reel

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3515S02-A

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

3

IDSS

A

C

Gate Current

100

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

165

Tch

+125

65 to +125

Tstg

C

Note Mounted on 1.08 cm² 1.0 mm (t) glass epoxy PCB

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PG10708EJ01V0DS (1st edition)

Date Published February 2008 NS

12 3 4 5 6 7...9

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