Datasheet > NE3521M04-T2B

NE3521M04-T2B

更新时间： 2024-01-21 18:58:49

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	414K
描述
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

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NE3521M04-T2B 数据手册

Data Sheet

NE3521M04

N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

R09DS0058EJ0100

Rev.1.00

Mar 19, 2013

FEATURES

•

Low noise figure and high associated gain:

NF = 0.85 dB TYP., Ga = 11 dB TYP. @ V_DS= 2 V, I_D= 10 mA, f = 20 GHz

NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @V_DS= 2 V, I_D= 6mA, f = 20 GHz (Reference Value)

Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

•

DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3521M04-T2

NE3521M04-T2-A

Flat-lead 4-pin 3 kpcs/reel

thin-type super

V86

• Embossed tape 8 mm wide

• Pin 1 (Source), Pin 2 (Drain)

face the perforation side of the

tape

minimold (M04)

NE3521M04-T2B

NE3521M04-T2B-A

15 kpcs/reel

(Pb-Free)

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3521M04

ABSOLUTE MAXIMUM RATINGS (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

V_GS

I_D

Ratings

Unit

4.0

–3.0

I_DSS

μA

°C

Gate Current

I_G

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

P_tot

125

T_ch

+125

T_stg

–65 to +125

°C

Note: Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0058EJ0100 Rev.1.00

Mar 19, 2013

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