Datasheet > NE38018-T2-67

NE38018-T2-67

更新时间： 2024-01-29 23:33:58

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	94K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4

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中文翻译

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数据手册

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NE38018-T2-67 数据手册

PRELIMINARY DATA SHEET

Hetero Junction Field Effect transistor

NE38018

L to S BAND LOW NOISE AMPLIFER

N-CHANNEL HJ-FET

FEATURES

Super Low noise figure & High Associated Gain

NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP³= 22 dBm (V67), OIP³= 23 dBm (V68) typ. at f = 2 GHz

NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz

4 pins super mini mold package

Wg = 800 µm

ORDERING INFORMATION (PLAN)

Part Number

Quantity

Packing Style

Embossed tape 8 mm wide.

NE38018-T1

3 kpcs/Reel.

Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.

NE38018-T2

3 kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.

Remark

Please contact with responsible NEC person, if you require evaluation sample.

(Part number for sample order: NE38018)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GS

I^D

Ratings

4.0

Unit

–3.0

I^DSS

µA

°C

Gate Current

I^G

100

Total Power Temperature

Channel Temperature

Storage Temperature

P^tot

T^ch

150

125

T^stg

–65 to +125

RECOMMENDED OPERATING CONDITIONS (T^A= 25°C)

Parameter

Drain to Source Voltage

Drain Current

Symbol

V^DS

I^D

MIN.

TYP.

MAX.

Unit

–

dBm

Input Power

Pⁱⁿ

The information in this document is subject to change without notice.

Document No. P13494EJ1V0DS00 (1st edition)

Date Published August 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7...16

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NE38018-T2-67-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H
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NE38018-T2-68-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H
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