是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, SUPERMINI-4 | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 其他特性: | LOW NOISE |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 3 V | 最大漏极电流 (ID): | 0.03 A |
FET 技术: | HETERO-JUNCTION | 最高频带: | S BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 12.5 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE38018T2 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun |
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NE38018-T2 | NEC |
获取价格 |
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
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NE38018-T2-67 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H |
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NE38018-T2-67-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H |
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NE38018-T2-68 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H |
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NE38018-T2-68-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H |
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NE38018-T2-A | NEC |
获取价格 |
S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, SUPERMINI-4 |
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NE38018T2-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun |
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NE38018-TI-67 | NEC |
获取价格 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
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NE38018-TI-68 | NEC |
获取价格 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
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