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NE38018-T2-68-A PDF预览

NE38018-T2-68-A

更新时间: 2024-02-16 06:02:30
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
16页 94K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4

NE38018-T2-68-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.3配置:SINGLE
最小漏源击穿电压:3 V最大漏极电流 (ID):0.03 A
FET 技术:HETERO-JUNCTION最高频带:S BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e6
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最小功率增益 (Gp):12.5 dB认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDE

NE38018-T2-68-A 数据手册

 浏览型号NE38018-T2-68-A的Datasheet PDF文件第2页浏览型号NE38018-T2-68-A的Datasheet PDF文件第3页浏览型号NE38018-T2-68-A的Datasheet PDF文件第4页浏览型号NE38018-T2-68-A的Datasheet PDF文件第5页浏览型号NE38018-T2-68-A的Datasheet PDF文件第6页浏览型号NE38018-T2-68-A的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
Hetero Junction Field Effect transistor  
NE38018  
L to S BAND LOW NOISE AMPLIFER  
N-CHANNEL HJ-FET  
FEATURES  
Super Low noise figure & High Associated Gain  
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz  
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz  
4 pins super mini mold package  
Wg = 800 µm  
ORDERING INFORMATION (PLAN)  
Part Number  
Quantity  
Packing Style  
Embossed tape 8 mm wide.  
NE38018-T1  
3 kpcs/Reel.  
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.  
NE38018-T2  
3 kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.  
Remark  
Please contact with responsible NEC person, if you require evaluation sample.  
(Part number for sample order: NE38018)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Ratings  
4.0  
Unit  
V
–3.0  
V
IDSS  
mA  
µA  
mA  
°C  
°C  
Gate Current  
IG  
100  
Total Power Temperature  
Channel Temperature  
Storage Temperature  
Ptot  
Tch  
150  
125  
Tstg  
–65 to +125  
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)  
Parameter  
Drain to Source Voltage  
Drain Current  
Symbol  
VDS  
ID  
MIN.  
TYP.  
MAX.  
Unit  
V
1
2
2
5
3
30  
0
mA  
dBm  
Input Power  
Pin  
The information in this document is subject to change without notice.  
Document No. P13494EJ1V0DS00 (1st edition)  
Date Published August 1998 N CP(K)  
Printed in Japan  
1998  
©

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