是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.82 | FET 技术: | JUNCTION |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.165 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE3520S03-T1C | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3520S03-T1C-A | RENESAS |
获取价格 |
NE3520S03-T1C-A | |
NE3520S03-T1D | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3520S03-T1D-A | RENESAS |
获取价格 |
NE3520S03-T1D-A | |
NE3521M04 | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3521M04-T2 | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3521M04-T2-A | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3521M04-T2B | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE3521M04-T2B-A | RENESAS |
获取价格 |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain | |
NE38018 | NEC |
获取价格 |
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |