Datasheet > NE3520S03-T1C

NE3520S03-T1C

更新时间： 2024-09-21 07:20:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	210K
描述
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

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NE3520S03-T1C 数据手册

Data Sheet

NE3520S03

N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

R09DS0029EJ0100

Rev.1.00

Oct 18, 2011

FEATURES

•

Low noise figure and high associated gain:

NF = 0.65 dB TYP., G_a= 13.5 dB TYP. @ f = 20 GHz, V_DS= 2 V, I_D= 10 mA

•

K band Micro-X plastic (S03) package

APPLICATIONS

•

20 GHz band DBS LNB

Other K band communication system

ORDERING INFORMATION

Part Number

Order Number

Package

S03 package

(Pb-Free)

Quantity

Marking

Supplying Form

NE3520S03-T1C

NE3520S03-T1C-A

2 kpcs/reel

• Embossed tape 8 mm wide

• Pin 4 (Gate) face the

perforation side of the tape

NE3520S03-T1D

NE3520S03-T1D-A

10 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE3520S03

ABSOLUTE MAXIMUM RATINGS (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

V_GS

I_D

Ratings

Unit

4.0

–3.0

I_DSS

μA

°C

Gate Current

I_G

100

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

P_tot

165

T_ch

+125

T_stg

–65 to +125

°C

Note: Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0029EJ0100 Rev.1.00

Oct 18, 2011

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