Datasheet > NE3516S02

NE3516S02

更新时间： 2022-04-21 20:54:38

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	152K
描述
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

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Data Sheet

NE3516S02

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

R09DS0038EJ0100

Rev.1.00

Apr 18, 2012

FEATURES

•

Low noise figure and high associated gain

NF = 0.35 dB TYP., G_a= 14 dB TYP. @ f = 12 GHz, V_DS= 2 V, I_D= 10 mA

NF = 0.35 dB TYP., G_a= 13.5 dB TYP. @ f = 12 GHz, V_DS= 2 V, I_D= 6 mA (Reference Value)

4-pin Micro-X plastic (S02) package

•

APPLICATIONS

•

X to Ku band DBS LNB

Other Ku band communication system

ORDERING INFORMATION

Part Number

NE3516S02-T1C NE3516S02-T1C-A S02

package

Order Number

Package

Supplying Form

Quantity

2 kpcs/reel

10 kpcs/reel

Marking

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

NE3516S02-T1D NE3516S02-T1D-A

(Pb-Free)

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE3516S02

ABSOLUTE MAXIMUM RATINGS (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Symbol

V_DS

V_GS

I_D

Ratings

4.0

Unit

Gate to Source Voltage

Drain Current

–3.0

I_DSS

μA

°C

Gate Current

I_G

100

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

P_tot

165

T_ch

+125

T_stg

–65 to +125

°C

Note: Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (T_A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Symbol

V_DS

MIN.

TYP.

MAX.

Unit

Drain Current

Input Power

I_D

dBm

P_in

–

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0038EJ0100 Rev.1.00

Apr 18, 2012

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