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NE3515S02-T1D-A PDF预览

NE3515S02-T1D-A

更新时间： 2024-02-14 09:27:17
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
10页 89K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, PLASTIC, S02, MICRO-X-4

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NE3515S02-T1D-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：MICROWAVE, R-PXMW-F4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.32外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：4 V
最大漏极电流 (ID)：0.025 AFET 技术：HETERO-JUNCTION
最高频带：KU BANDJESD-30 代码：R-PXMW-F4
JESD-609代码：e6元件数量：1
端子数量：4工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：MICROWAVE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：11 dB
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

NE3515S02-T1D-A 数据手册

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DATA SHEET  
HETERO JUNCTION FIELD EFFECT TRANSISTOR  
NE3515S02  
X to Ku-BAND SUPER LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
FEATURES  
•
Super low noise figure, high associated gain and middle output power  
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, I = 10 mA  
= 25 mA set (Non-RF)  
D
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, I  
Micro-X plastic (S02) package  
D
•
APPLICATIONS  
•
•
•
X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer  
DBS LNB, VSAT  
Other X to Ku-band communication systems  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Quantity  
Marking  
G
Supplying Form  
NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel  
NE3515S02-T1D NE3515S02-T1D-A 10 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 4 (Gate) faces the perforation side  
of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE3515S02  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Ratings  
Unit  
4
−3  
V
V
IDSS  
mA  
μA  
mW  
°C  
Gate Current  
IG  
100  
Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
165  
Tch  
+125  
−65 to +125  
Tstg  
°C  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PG10708EJ01V0DS (1st edition)  
Date Published February 2008 NS  
Printed in Japan  
2007, 2008  
1234567...10

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