Data Sheet
NE3513M04
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
R09DS0028EJ0100
Rev.1.00
Oct 18, 2011
FEATURES
•
Low noise figure and high associated gain:
NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz
NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value)
•
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
•
•
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3513M04-T2
NE3513M04-T2-A
Flat-lead 4-pin 3 kpcs/reel
thin-type super
V84
• Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
minimold (M04)
NE3513M04-T2B
NE3513M04-T2B-A
15 kpcs/reel
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3513M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
4.0
V
–3.0
V
IDSS
mA
μA
mW
°C
Gate Current
IG
80
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Ptot
125
Tch
+125
–65 to +125
Tstg
°C
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
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