Datasheet > NE3514S02_13

NE3514S02_13

更新时间： 2022-04-20 10:51:06

品牌	Logo	应用领域
CEL		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	285K
描述
HETERO JUNCTION FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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NE3514S02_13 数据手册

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3514S02

K BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz

• Micro-X plastic (S02) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3514S02-T1C NE3514S02-T1C-A S02 (Pb-Free) 2 kpcs/reel

NE3514S02-T1D NE3514S02-T1D-A 10 kpcs/reel

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3514S02-A

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

3

IDSS

A

C

Gate Current

100

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

165

Tch

+125

65 to +125

Tstg

C

Note Mounted on 1.08 cm² 1.0 mm (t) glass epoxy PCB

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PG10593EJ01V0DS (1st edition)

Date Published February 2006 CP(N)

12 3 4 5 6 7 8

中文翻译

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与NE3514S02_13相关器件

型号	品牌	描述	获取价格	数据表
NE3514S02-T1C	CEL	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3514S02-T1C-A	CEL	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3514S02-T1D	CEL	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3514S02-T1D-A	CEL	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3515S02	CEL	HETERO JUNCTION FIELD EFFECT TRANSISTOR	获取价格
NE3515S02	RENESAS	X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3515S02-A	CEL	X to Ku-BAND SUPER LOW NOISE AMPLIFIER	获取价格
NE3515S02-T1C	RENESAS	X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3515S02-T1C	CEL	HETERO JUNCTION FIELD EFFECT TRANSISTOR	获取价格
NE3515S02-T1C-A	CEL	X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3515S02-T1C-A	NEC	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju	获取价格
NE3515S02-T1D	RENESAS	X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
NE3515S02-T1D	CEL	HETERO JUNCTION FIELD EFFECT TRANSISTOR	获取价格
NE3515S02-T1D-A	RENESAS	NE3515S02-T1D-A	获取价格
NE3515S02-T1D-A	CEL	HETERO JUNCTION FIELD EFFECT TRANSISTOR	获取价格
NE3515S02-T1D-A	NEC	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju	获取价格
NE3516S02	RENESAS	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain	获取价格
NE3516S02-T1C	RENESAS	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain	获取价格
NE3516S02-T1C-A	RENESAS	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain	获取价格
NE3516S02-T1D	RENESAS	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain	获取价格

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