Datasheet > NE3509M04-T2B-A

NE3509M04-T2B-A

更新时间： 2024-02-05 23:15:45

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
10页	82K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

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NE3509M04-T2B-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	SINGLE	最小漏源击穿电压：	3 V
最大漏极电流 (ID)：	0.02 A	FET 技术：	HETERO-JUNCTION
最高频带：	S BAND	JESD-30 代码：	R-PDSO-F4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	16 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

NE3509M04-T2B-A 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3509M04

L TO S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure and high associated gain

NF = 0.4 dB TYP., G^a= 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA

Flat-lead 4-pin thin-type super minimold (M04) package

•

APPLICATIONS

•

Satellite radio (SDARS, DMB, etc.) antenna LNA

GPS antenna LNA

Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

NE3509M04

Order Number

NE3509M04-A

Package

Quantity

Marking

V80

Supplying Form

Flat-lead 4-pin thin- 50 pcs (Non reel)

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

type super minimold

NE3509M04-T2

NE3509M04-T2-A

3 kpcs/reel

(M04) (Pb-Free)

15 kpcs/reel

<R>

NE3509M04-T2B NE3509M04-T2B-A

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3509M04

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

4.0

Unit

−3.0

IDSS

μA

°C

Gate Current

200

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

150

Tch

+150

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PG10608EJ02V0DS (2nd edition)

Date Published October 2008 NS

Printed in Japan

2005, 2008

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...10

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NE3510M04	NEC	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	获取价格
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