5秒后页面跳转
NE3509M04-A PDF预览

NE3509M04-A

更新时间: 2024-01-13 04:53:14
品牌 Logo 应用领域
CEL 晶体放大器晶体管光电二极管ISM频段
页数 文件大小 规格书
11页 1257K
描述
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE3509M04-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFP包装说明:SMALL OUTLINE, R-PDSO-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
最小漏源击穿电压:4 V最大漏极电流 (ID):0.06 A
FET 技术:HETERO-JUNCTION最高频带:S BAND
JESD-30 代码:R-PDSO-F4JESD-609代码:e6
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

NE3509M04-A 数据手册

 浏览型号NE3509M04-A的Datasheet PDF文件第2页浏览型号NE3509M04-A的Datasheet PDF文件第3页浏览型号NE3509M04-A的Datasheet PDF文件第4页浏览型号NE3509M04-A的Datasheet PDF文件第5页浏览型号NE3509M04-A的Datasheet PDF文件第6页浏览型号NE3509M04-A的Datasheet PDF文件第7页 
PRELIMINARY PRODUCT INFORMATION  
HETERO JUNCTION FIELD EFFECT TRANSISITOR  
NE3509M04  
L to S BAND LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
FEATURES  
- Super Low Noise Figure & Associated Gain :  
NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA  
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )  
APPLICATIONS  
- Satellite Radio(SDARS, DMB, etc.) antenna LNA  
- GPS antenna LNA  
- LNA for Micro-wave communication system  
ORDERING INFORMATION  
Part Number  
Order Number  
Quantity  
Marking  
V80  
Supplying Form  
- 8 mm wide emboss taping  
50pcs (Non reel)  
NE3509M04  
NE3509M04-A  
- Pin1(Source), Pin2(Drain)  
face the perforation side of the tape  
NE3509M04-T2  
NE3509M04-T2-A  
3 Kpcs/reel  
Remark To order evaluation samples, please contact your local NEC sales office.  
Part number for sample order: NE3509M04  
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
SYMBOL  
VDS  
VGS  
ID  
RATINGS  
4.0  
UNIT  
V
-3.0  
V
IDSS  
mA  
µA  
mW  
°C  
Gate Current  
IG  
200  
Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
Tch  
Tstg  
150  
+150  
- 65 to +150  
°C  
Note Mounted on 1.08cm2 X 1.0mm(t) glass epoxy PCB  
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Document No. P*****EJ0V0PM00 (10th edition)  
© NEC Compound Semiconductor Devices 2005  
Date Published October 2005 CP(K)  

与NE3509M04-A相关器件

型号 品牌 描述 获取价格 数据表
NE3509M04-T2 CEL L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

获取价格

NE3509M04-T2-A NEC RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun

获取价格

NE3509M04-T2-A CEL L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

获取价格

NE3509M04-T2-A RENESAS NE3509M04-T2-A

获取价格

NE3509M04-T2B-A NEC RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun

获取价格

NE3509M04-T2B-A RENESAS NE3509M04-T2B-A

获取价格