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NE3509M04-A PDF预览

NE3509M04-A

更新时间： 2024-02-19 00:14:44
品牌 Logo 应用领域
CEL 晶体放大器晶体管光电二极管ISM频段
页数 文件大小 规格书
11页 1257K
描述
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3509M04-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：DFP包装说明：SMALL OUTLINE, R-PDSO-F4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
最小漏源击穿电压：4 V最大漏极电流 (ID)：0.06 A
FET 技术：HETERO-JUNCTION最高频带：S BAND
JESD-30 代码：R-PDSO-F4JESD-609代码：e6
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NE3509M04-A 数据手册

 浏览型号NE3509M04-A的Datasheet PDF文件第5页浏览型号NE3509M04-A的Datasheet PDF文件第6页浏览型号NE3509M04-A的Datasheet PDF文件第7页浏览型号NE3509M04-A的Datasheet PDF文件第8页浏览型号NE3509M04-A的Datasheet PDF文件第9页浏览型号NE3509M04-A的Datasheet PDF文件第10页 
4590 Patrick Henry Drive  
Santa Clara, CA 95054-1817  
Telephone: (408) 919-2500  
Facsimile: (408) 988-0279  
Subject: Compliance with EU Directives  
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant  
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous  
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive  
2003/11/EC Restriction on Penta and Octa BDE.  
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates  
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are  
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.  
All devices with these suffixes meet the requirements of the RoHS directive.  
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that  
go into its products as of the date of disclosure of this information.  
Restricted Substance  
per RoHS  
Concentration Limit per RoHS  
(values are not yet fixed)  
Concentration contained  
in CEL devices  
-A  
-AZ  
(*)  
Lead (Pb)  
Mercury  
< 1000 PPM  
< 1000 PPM  
< 100 PPM  
< 1000 PPM  
< 1000 PPM  
< 1000 PPM  
Not Detected  
Not Detected  
Cadmium  
Hexavalent Chromium  
PBB  
Not Detected  
Not Detected  
Not Detected  
Not Detected  
PBDE  
If you should have any additional questions regarding our devices and compliance to environmental  
standards, please do not hesitate to contact your local representative.  
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance  
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information  
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better  
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate  
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL  
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for  
release.  
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to  
customer on an annual basis.  
See CEL Terms and Conditions for additional clarification of warranties and liability.  
1...891011

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与NE3509M04-A相关器件

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NE3509M04-T2 CEL L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3509M04-T2-A NEC RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun

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NE3509M04-T2-A CEL L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3509M04-T2-A RENESAS NE3509M04-T2-A

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NE3509M04-T2B-A NEC RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun

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NE3509M04-T2B-A RENESAS NE3509M04-T2B-A

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