Datasheet > NE3509M04_06

NE3509M04_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
CEL		放大器
页数	文件大小	规格书
9页	279K
描述
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3509M04_06 数据手册

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3509M04

L TO S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure and high associated gain

NF = 0.4 dB TYP., G^a= 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA

Flat-lead 4-pin thin-type super minimold (M04) package

•

APPLICATIONS

•

Satellite radio (SDARS, DMB, etc.) antenna LNA

GPS antenna LNA

Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

NE3509M04

Order Number

NE3509M04-A

Package

Quantity

Marking

V80

Supplying Form

Flat-lead 4-pin thin- 50 pcs (Non reel)

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

type super minimold

NE3509M04-T2 NE3509M04-T2-A

3 kpcs/reel

(M04) (Pb-Free)

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3509M04

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

4.0

Unit

−3.0

IDSS

µA

°C

Gate Current

200

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

150

Tch

+150

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10608EJ01V0DS (1st edition)

Date Published April 2006 NS CP(K)

12 3 4 5 6 7...9

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