是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | LEAD FREE, CERAMIC, 84C, MICRO-X-4 | Reach Compliance Code: | compliant |
风险等级: | 5.74 | Is Samacsys: | N |
其他特性: | LOW NOISE | 配置: | SINGLE |
最小漏源击穿电压: | 3 V | 最大漏极电流 (ID): | 0.015 A |
FET 技术: | JUNCTION | 最高频带: | K BAND |
JESD-30 代码: | O-CRDB-F4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 11 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE350184C-T1A-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F | |
NE3503M04 | CEL |
获取价格 |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET | |
NE3503M04-A | CEL |
获取价格 |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET | |
NE3503M04-A | RENESAS |
获取价格 |
NE3503M04-A | |
NE3503M04-T2 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju | |
NE3503M04-T2 | RENESAS |
获取价格 |
KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, SUPER MINIMOLD, M04, 4 PIN | |
NE3503M04-T2-A | CEL |
获取价格 |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET | |
NE3503M04-T2-A | RENESAS |
获取价格 |
NE3503M04-T2-A | |
NE3503M04-T2B-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju | |
NE3503M04-T2B-A | RENESAS |
获取价格 |
NE3503M04-T2B-A |