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NE350184C-T1-A PDF预览

NE350184C-T1-A

更新时间: 2024-11-13 14:54:11
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
9页 66K
描述
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET, LEAD FREE, CERAMIC, 84C, MICRO-X-4

NE350184C-T1-A 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:LEAD FREE, CERAMIC, 84C, MICRO-X-4Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:3 V最大漏极电流 (ID):0.015 A
FET 技术:JUNCTION最高频带:K BAND
JESD-30 代码:O-CRDB-F4湿度敏感等级:1
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最小功率增益 (Gp):11 dB认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE350184C-T1-A 数据手册

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DATA SHEET  
HETERO JUNCTION FIELD EFFECT TRANSISTOR  
NE350184C  
K-BAND SUPER LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
FEATURES  
Super low noise figure and high associated gain  
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz  
Micro-X ceramic (84C) package  
APPLICATIONS  
20 GHz-band DBS LNB  
Other K-band communication systems  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Quantity  
1 kpcs/reel  
5 kpcs/reel  
Marking  
A
Supplying Form  
NE350184C-T1  
NE350184C-T1-A  
84C (Pb-Free)  
• 12 mm wide embossed taping  
• Pin 4 (Gate) faces the perforation side  
of the tape  
NE350184C-T1A NE350184C-T1A-A  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE350184C  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Ratings  
Unit  
4
3  
V
V
IDSS  
mA  
µA  
mW  
°C  
Gate Current  
IG  
80  
Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
165  
Tch  
+150  
65 to +150  
Tstg  
°C  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10584EJ01V0DS (1st edition)  
Date Published November 2005 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices, Ltd. 2003, 2005  

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