Datasheet > NE3505M04

NE3505M04

更新时间： 2022-02-26 13:46:18

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
20页	335K
描述
HETERO JUNCTION FIELD EFFECT TRANSISITOR

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NE3505M04 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3505M04

L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

- Super Low Noise Figure & Associated Gain :

NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz

NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only)

NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only)

- Flat-lead 4-pin tin-type super mini-mold(M04) package

APPLICATIONS

- Satellite Radio(SDARS, DMB, etc.) antenna LNA

- 5.8GHz-band WLAN LNA

- LNA for Micro-wave communication system

ORDERING INFORMATION

PART NUMBER

Quantity

Marking

V76

Packaging Style

50pcs (Non reel)

NE3505M04

8 mm wide emboss taping

1pin(source), 2pin(Drain) feed hole direction

NE3505M04-T2

3 Kpcs/reel

Remark To order evaluation samples, please contact your local NEC sales office.

Part number for sample order: NE3505M04

ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current

SYMBOL

VDS

VGS

RATINGS

4.0

UNIT

-3.0

IDSS

µA

°C

Gate Current

140

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

Tch

125

+125

Tstg

- 65 to +125

°C

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P*****EJ0V0PM00 (1st edition)

Date Published August 2004 CP(K)

Printed in Japan

12 3 4 5 6 7...20

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