Datasheet > NE3505M04

NE3505M04

更新时间： 2022-02-26 13:46:18

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
20页	335K
描述
HETERO JUNCTION FIELD EFFECT TRANSISITOR

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数据手册

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NE3505M04 数据手册

NE3505M04

RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)

PARAMETER

Drain to Source Voltage

Drain Current

SYMBOL

MIN.

TYP.

MAX.

2.5

UNIT

VDS

---

dBm

Input Power

---

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

PARAMETER

SYMBOL TEST CONDITIONS MIN.

TYP.

MAX.

UNIT

Gate to Source Leak Current

Saturated Drain Current

IGSO

IDSS

VGS(off)

VGS=-3V

---

0.5

---

VDS=2V, VGS=0V

VDS=2V, ID=100µA

VDS=2V, ID=15mA

120

-1.5

---

Gate to Source Cutoff Voltage

-0.35

---

Trans conductance

Noise Figure

---

0.4

15.5

0.6

---

VDS=2V, ID=15mA

f＝4GHz

Associated Gain

The information in this document is subject to change without notice.

DATA SHEET

123 4 5 6 7...20

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