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NE3503M04-T2B-A PDF预览

NE3503M04-T2B-A

更新时间: 2024-01-20 08:17:22
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
11页 199K
描述
NE3503M04-T2B-A

NE3503M04-T2B-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.29
配置:SINGLE最小漏源击穿电压:3 V
最大漏极电流 (ID):0.015 AFET 技术:HETERO-JUNCTION
最高频带:KU BANDJESD-30 代码:R-PDSO-F4
JESD-609代码:e6元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最小功率增益 (Gp):11 dB
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE3503M04-T2B-A 数据手册

 浏览型号NE3503M04-T2B-A的Datasheet PDF文件第2页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第3页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第4页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第5页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第6页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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