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NE3503M04-T2B-A PDF预览

NE3503M04-T2B-A

更新时间: 2024-01-12 23:21:35
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
11页 199K
描述
NE3503M04-T2B-A

NE3503M04-T2B-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.29
配置:SINGLE最小漏源击穿电压:3 V
最大漏极电流 (ID):0.015 AFET 技术:HETERO-JUNCTION
最高频带:KU BANDJESD-30 代码:R-PDSO-F4
JESD-609代码:e6元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最小功率增益 (Gp):11 dB
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE3503M04-T2B-A 数据手册

 浏览型号NE3503M04-T2B-A的Datasheet PDF文件第5页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第6页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第7页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第8页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第9页浏览型号NE3503M04-T2B-A的Datasheet PDF文件第10页 
NE3503M04  
This product uses gallium arsenide (GaAs).  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points.  
Caution GaAs Products  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  

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