Datasheet > NE3503M04-T2B-A

NE3503M04-T2B-A

更新时间： 2024-11-13 14:14:59

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
9页	71K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NE3503M04-T2B-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
Reach Compliance Code：	unknown	风险等级：	5.71
配置：	SINGLE	最小漏源击穿电压：	3 V
最大漏极电流 (ID)：	0.015 A	FET 技术：	HETERO-JUNCTION
最高频带：	KU BAND	JESD-30 代码：	R-PDSO-F4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	11 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

NE3503M04-T2B-A 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3503M04

C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure and high associated gain

NF = 0.45 dB TYP., G^a= 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

Flat-lead 4-pin thin-type super minimold (M04) package

Gate width: W^g= 160 μm

<R>

•

APPLICATIONS

•

DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

NE3503M04

Order Number

NE3503M04-A

Package

Quantity

Marking

V75

Supplying Form

Flat-lead 4-pin thin- 50 pcs (Non reel)

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

type super minimold

NE3503M04-T2

NE3503M04-T2-A

3 kpcs/reel

(M04) (Pb-Free)

15 kpcs/reel

NE3503M04-T2B NE3503M04-T2B-A

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3503M04

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

4.0

Unit

−3.0

IDSS

μA

°C

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

125

Tch

+125

−65 to +125

Tstg

°C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PG10456EJ03V0DS (3rd edition)

Date Published January 2009 NS

Printed in Japan

2003, 2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...9

中文翻译

下载PDF

与NE3503M04-T2B-A相关器件

型号	品牌	获取价格	描述	数据表
NE3505M04	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3505M04-T2	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-A	RENESAS	获取价格	NE3508M04-A
NE3508M04-T2	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-T2-A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-T2-A	RENESAS	获取价格	NE3508M04-T2-A
NE3508M04-T2B-A	RENESAS	获取价格	NE3508M04-T2B-A
NE3509M04	CEL	获取价格	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

与NE3503M04-T2B-A相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

26
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

NE3503M04-T2B-A

NE3503M04-T2B-A 技术参数

NE3503M04-T2B-A 数据手册

与NE3503M04-T2B-A相关器件

与NE3503M04-T2B-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NE3503M04-T2B-A

NE3503M04-T2B-A 技术参数

NE3503M04-T2B-A 数据手册

与NE3503M04-T2B-A相关器件

与NE3503M04-T2B-A相关文章

您还可以找

您在本页遇到什么问题？