Datasheet > NE3503M04-T2-A

NE3503M04-T2-A

更新时间： 2024-09-24 22:06:23

品牌	Logo	应用领域
CEL		晶体放大器晶体管光电二极管 ISM频段
页数	文件大小	规格书
7页	397K
描述
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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替代型号

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NE3503M04-T2-A 数据手册

NEC's C TO Ku BAND

SUPER LOW NOISE AND

NE3503M04

HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET

FEATURES

• SUPER LOW NOISE FIGURE AND

HIGH ASSOCIATED GAIN:

NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V,

ID = 10 mA, f = 12 GHz

• FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

(M04) PACKAGE:

• GATE WIDTH:

Wg = 160 μm

M04 PACKAGE

APPLICATIONS

•

DBS LNB gain-stage, Mix-stage

Low noise ampliﬁer for microwave communication

system

ORDERING INFORMATION

PART NUMBER

NE3503M04-A

QUANTITY

50 pcs (Non reel)

3 kpcs/reel

PACKAGE

MARKING

V75

SUPPLYING FORM

4-Pin thin-type

super minimold

(Pb-Free)

• 8 mm wide embossed taping

NE3503M04-T2-A

• Pin 1 (Source), Pin 2 (Drain) face the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales ofﬁce.

Part number for sample order: NE3503M04-A

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current

SYMBOL

VDS

VGS

RATINGS

4.0

UNIT

−3.0

IDSS

μA

°C

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

125

Tch

+125

Tstg

−65 to +125

°C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

12 3 4 5 6 7

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NE3503M04-T2-A 替代型号

型号	品牌	替代类型	描述	数据表
NE3503M04-A	CEL	完全替代	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET

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NE3503M04-T2B-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju
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NE3505M04-T2	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
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NE3508M04-A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-A	RENESAS	获取价格	NE3508M04-A
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NE3508M04-T2-A	CEL	获取价格	HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04-T2-A	RENESAS	获取价格	NE3508M04-T2-A