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NE34018-TI-64 PDF预览

NE34018-TI-64

更新时间： 2024-11-13 13:11:59
品牌 Logo 应用领域
CEL 晶体放大器晶体管光电二极管ISM频段
页数 文件大小 规格书
10页 200K
描述
RF Small Signal Field-Effect Transistor, PLASTIC, SOT-343, 4 PIN

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NE34018-TI-64 技术参数

生命周期：Contact Manufacturer零件包装代码：SOT
包装说明：PLASTIC, SOT-343, 4 PIN针数：4
Reach Compliance Code：compliant风险等级：5.19
Is Samacsys：N认证状态：Not Qualified
Base Number Matches：1

NE34018-TI-64 数据手册

 浏览型号NE34018-TI-64的Datasheet PDF文件第2页浏览型号NE34018-TI-64的Datasheet PDF文件第3页浏览型号NE34018-TI-64的Datasheet PDF文件第4页浏览型号NE34018-TI-64的Datasheet PDF文件第5页浏览型号NE34018-TI-64的Datasheet PDF文件第6页浏览型号NE34018-TI-64的Datasheet PDF文件第7页 
GaAs HJ-FET L TO S BAND  
LOW NOISE AMPLIFIER  
(New Plastic Package)  
NE34018  
NOISE FIGURE & ASSOCIATED  
FEATURES  
GAIN vs. FREQUENCY  
VDS = 3 V, IDS = 20 mA  
•
•
•
LOW COST MINIATURE PLASTIC PACKAGE  
(SOT-343)  
25  
20  
15  
10  
5
4
3
2
1
0
LOW NOISE FIGURE:  
0.6 dB typical at 2 GHz  
GA  
HIGH ASSOCIATED GAIN:  
16.0 dB typical at 2 GHz  
•
•
LG = 0.6 µm, WG = 400 µm  
TAPE & REEL PACKAGING  
0
DESCRIPTION  
NF  
NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-  
tion FET housed in a miniature (SOT-343) plastic surface  
mount package. The device is fabricated using ion implanta-  
tion for improved RF and DC performance, reliability, and  
uniformity. Its low noise figure, high gain, small size and  
weight make it an ideal low noise amplifier transistor in the 1-  
3 GHz frequency range. The NE34018 is suitable for GPS,  
PCS, WLAN, MMDS, and other commercial applications.  
0.5  
1
2
3
4
5 6 7 8 910  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
18 Package  
SOT-343 Style  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE34018  
PACKAGE OUTLINE  
18  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
GA  
Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz  
Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz  
dB  
dB  
0.6  
1.0  
14.0  
16.0  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 2 GHz  
VDS = 2 V, IDS = 10 mA  
dBm  
dBm  
12  
16.5  
VDS = 3 V, IDS = 30 mA  
G1dB  
Gain at P1dB, f = 2 GHz  
VDS = 2 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dB  
dB  
17.0  
17.5  
O/P IP3  
Output IP3 at f = 2 GHz, ∆f = 1 MHz  
VDS = 2 V, IDS = 10 mA  
dBm  
dBm  
23  
32  
VDS = 2 V, IDS = 30 mA  
IDSS  
VP  
Saturated Drain Current at VDS = 2 V, VGS = 0 V  
Pinch Off Voltage at VDS = 2 V, ID = 100 µA  
Transconductance at VDS = 2 V, ID = 5 mA  
Gate to Source Leakage Current at VGS = -3 V  
Thermal Resistance (Channel to Ambient)  
mA  
V
30  
-2.0  
30  
80  
120  
-0.2  
-0.8  
gm  
mS  
µA  
IGSO  
0.5  
10  
RTH(CH-A)  
˚C/W  
833  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production  
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.  
California Eastern Laboratories  
1234567...10

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