Datasheet > NE350184C-T1A

NE350184C-T1A

更新时间： 2024-11-13 03:46:43

品牌	Logo	应用领域
CEL		晶体放大器晶体管场效应晶体管
页数	文件大小	规格书
8页	265K
描述
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE350184C-T1A 数据手册

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE350184C

K-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure and high associated gain

NF = 0.7 dB TYP., G^a= 13.5 dB TYP. @ f = 20 GHz

Micro-X ceramic (84C) package

•

APPLICATIONS

•

20 GHz-band DBS LNB

Other K-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

1 kpcs/reel

5 kpcs/reel

Marking

Supplying Form

NE350184C-T1

NE350184C-T1-A

84C (Pb-Free)

• 12 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

NE350184C-T1A NE350184C-T1A-A

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE350184C

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

VDS

VGS

Ratings

Unit

−3

IDSS

µA

°C

Gate Current

Note

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

165

Tch

+150

−65 to +150

Tstg

°C

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10584EJ01V0DS (1st edition)

Date Published November 2005 CP(K)

12 3 4 5 6 7 8

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与NE350184C-T1A相关器件

型号	品牌	获取价格	描述	数据表
NE350184C-T1-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F
NE350184C-T1-A	RENESAS	获取价格	NE350184C-T1-A
NE350184C-T1A-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F
NE3503M04	CEL	获取价格	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
NE3503M04-A	CEL	获取价格	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
NE3503M04-A	RENESAS	获取价格	NE3503M04-A
NE3503M04-T2	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju
NE3503M04-T2	RENESAS	获取价格	KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, SUPER MINIMOLD, M04, 4 PIN
NE3503M04-T2-A	CEL	获取价格	NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
NE3503M04-T2-A	RENESAS	获取价格	NE3503M04-T2-A