NDT3055L

更新时间： 2024-11-15 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	229K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册
替代型号

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NDT3055L 数据手册

August 1998

NDT3055L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance and provide superior

switching performance, and withstand high energy pulse

in the avalanche and commutation modes. These devices

are particularly suited for low voltage applications such as

DC motor control and DC/DC conversion where fast

switching, low in-line power loss, and resistance to

transients are needed.

4 A, 60 V. R_DS(ON)= 0.100 W @ V_GS= 10 V,

R_DS(ON)= 0.120 W @ V_GS= 4.5 V.

Low drive requirements allowing operation directly from logic

drivers. V_GS(TH)< 2V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

SuperSOT^TM-3

SuperSOT^TM-8

SO-8

SuperSOT^TM-6

SOIC-16

SOT-223

(J23Z)

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

NDT3055L

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

±20

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_q_JA

R_q_JC

(Note 1)

* Order option J23Z for cropped center drain lead.

NDT3055L Rev.A1

12 3 4 5 6 7 8

中文翻译

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NDT3055L 替代型号

型号	品牌	替代类型	描述	数据表
NDT3055L	ONSEMI	类似代替	N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ
NDT3055	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor
STN3NF06	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET

与NDT3055L相关器件

型号	品牌	获取价格	描述	数据表
NDT3055L(J23Z)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 3.7A I(D) \| SOT-223
NDT3055L/D84Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/L99Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/S62Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-

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