Datasheet > NDT40P06

NDT40P06

更新时间： 2024-11-17 18:09:51

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科信 - KEXIN		/
页数	文件大小	规格书
5页	406K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT40P06 数据手册

SMD Type

MOSFET

P-Channel MOSFET

NDT40P06

TO-252

Ƶ Features

ƽ VDS (V) =-60V

ƽ I

ƽ RDS(ON) ˘ 30mȍ @ VGS = -10V, I

ƽ RDS(ON) ˘ 40mȍ @ VGS = -4.5V, I

D =-40 A

= -8A

= -6A

1. Gate (G)

2. Drain (D)

3. Source (S)

Ƶ Absolute Maximum Ratings (T = 25°C, unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

-60

±20

= 25 °C

-40

Continuous Drain Current

= 100 °C

-26

Pulsed Drain Current

Power Dissipation

-140

72.6

Thermal Resistance, Junction- to-Ambient

Thermal Resistance, Junction- to-Case

Junction Temperature

煭JA

煭JC

ć/W

1.72

150

Junction Storage Temperature Range

Tstg

-55 to 150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

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