Datasheet > NDT451AN

NDT451AN

更新时间： 2024-11-17 11:14:15

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关脉冲光电二极管晶体管场效应晶体管
页数	文件大小	规格书
8页	478K
描述
N 沟道增强型场效应晶体管，30V，7.2A，35mΩ

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技术参数
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替代型号

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NDT451AN 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G4	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	0.92	其他特性：	FAST SWITCHING
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	7.2 A
最大漏极电流 (ID)：	7.2 A	最大漏源导通电阻：	0.035 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3 W
最大脉冲漏极电流 (IDM)：	25 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NDT451AN 数据手册

ON Semiconductor

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

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NDT451AN 替代型号

型号	品牌	替代类型	描述	数据表
NDT451AN	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor

与NDT451AN相关器件

型号	品牌	获取价格	描述	数据表
NDT451AN(J23Z)	FAIRCHILD	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 7.2A I(D) \| SOT-223
NDT451AN/D84Z	TI	获取价格	7.2A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT451AN/L99Z	TI	获取价格	7.2A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT451AN/S62Z	TI	获取价格	7.2A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT451AN_09	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDT451ANJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
NDT451ANL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
NDT451ANL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.2A I(D), 30V, 0.05ohm, N-Channel, Silicon, Metal-oxide Se
NDT451N	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDT451N	TI	获取价格	5.5A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261

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