NDT452

更新时间： 2024-11-04 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	95K
描述
P-Channel Enhancement Mode Field Effect Transistor

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数据手册

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NDT452 数据手册

June 1996

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

-5A, -30V. R_DS(ON)= 0.065W @ V_GS= -10V

R_DS(ON)= 0.1W @ V_GS= -4.5V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDT452AP

-30

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

(Note 1a)

-5

- 15

Maximum Power Dissipation

(Note 1a)

(Note 1b)

P_D

1.3

(Note 1c)

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

* Order option J23Z for cropped center drain lead.

NDT452AP Rev. B1

12 3 4 5 6

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与NDT452相关器件

型号	品牌	获取价格	描述	数据表
NDT452AP	FAIRCHILD	获取价格	P-Channel Enhancement Mode Field Effect Transistor
NDT452AP	TI	获取价格	5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT452AP	ONSEMI	获取价格	P 沟道增强型场效应晶体管 -30V，-5A，65mΩ
NDT452AP	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NDT452AP(J23Z)	FAIRCHILD	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 5A I(D) \| SOT-223
NDT452AP/D84Z	TI	获取价格	5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT452AP/J23Z	TI	获取价格	5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET
NDT452AP/L99Z	TI	获取价格	5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT452AP/S62Z	TI	获取价格	5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
NDT452AP_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Meta