是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.78 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 5.5 A |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
最大脉冲漏极电流 (IDM): | 25 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NDT451ND84Z | FAIRCHILD | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Met |
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NDT451NJ23ZD84Z | FAIRCHILD | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Met |
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NDT451NL99Z | FAIRCHILD | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.08ohm, N-Channel, Silicon, Metal-oxide Se |
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|
NDT452 | FAIRCHILD | P-Channel Enhancement Mode Field Effect Transistor |
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NDT452AP | FAIRCHILD | P-Channel Enhancement Mode Field Effect Transistor |
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NDT452AP | TI | 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 |
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