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NDT451N PDF预览

NDT451N

更新时间: 2024-11-15 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
10页 227K
描述
N-Channel Enhancement Mode Field Effect Transistor

NDT451N 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):25 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NDT451N 数据手册

 浏览型号NDT451N的Datasheet PDF文件第2页浏览型号NDT451N的Datasheet PDF文件第3页浏览型号NDT451N的Datasheet PDF文件第4页浏览型号NDT451N的Datasheet PDF文件第5页浏览型号NDT451N的Datasheet PDF文件第6页浏览型号NDT451N的Datasheet PDF文件第7页 
September 1996  
NDT451N  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
Power SOT N-Channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This very  
high density process is especially tailored to minimize  
5.5A, 30V. RDS(ON) = 0.05W @ VGS = 10V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
on-state resistance and  
provide superior switching  
performance. These devices are particularly suited for low  
voltage applications such as DC motor control and  
DC/DC conversion where fast switching, low in-line power  
loss, and resistance to transients are needed.  
___________________________________________________________________________________________________________  
D
D
D
S
G
S
G
Absolute Maximum Ratings  
TA = 25°C unless otherwise noted  
Symbol Parameter  
NDT451N  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
VDSS  
VGSS  
ID  
±20  
Drain Current  
- Continuous  
- Pulsed  
Maximum Power Dissipation  
(Note 1a)  
(Note 1a)  
±5.5  
±25  
3
W
PD  
(Note 1b)  
(Note 1c)  
1.3  
1.1  
Operating and Storage Temperature Range  
-65 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
42  
12  
°C/W  
°C/W  
R
JA  
q
Thermal Resistance, Junction-to-Case  
R
JC  
q
* Order option J23Z for cropped center drain lead.  
© 1997 Fairchild Semiconductor Corporation  
NDT451N Rev. C2  

NDT451N 替代型号

型号 品牌 替代类型 描述 数据表
NDT410EL FAIRCHILD

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C